PART |
Description |
Maker |
BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
|
HVU202B |
Diodes>Variable Capacitance Variable Capacitance Diode for UHF/VHF tuner
|
Renesas Electronics Corporation
|
HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
|
HVC417C |
Diodes>Variable Capacitance Variable Capacitance Diode for tuner
|
RENESAS[Renesas Electronics Corporation]
|
HVU316 |
Diodes>Variable Capacitance Variable Capacitance Diode for BS/CS tuner
|
Renesas Electronics Corporation
|
RKV651KL |
31.25 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for FM tuner IC
|
Renesas Electronics Corporation
|
RKV606KP |
3.34 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
|