PART |
Description |
Maker |
PMD18K100 |
SILICON POWER DARINGTON TRANSISTORS COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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Central Semiconductor C...
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1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA Standard Rectifier (trr more than 500ns) N/A SILICON POWER RECTIFIER
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MICROSEMI CORP-LAWRENCE Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
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BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system 4.0 AMPERE POWER TRANSISTORS Plastic Medium-Power Silicon NPN Darlingtons DARLINGTON POWER TRANSISTORS NPN SILICON
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MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc Motorola, Inc.
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
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2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
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NEC[NEC]
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BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system 8 AMPERE POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
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Motorola Inc MOTOROLA[Motorola Inc] Motorola, Inc ON Semiconductor
|
2SB1431 |
Silicon power transistor From old datasheet system PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
2SD2163 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
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BUV21 BUV21_D ON0257 |
From old datasheet system 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS SITCHMODE Series NPN Silicon Power Transistor
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Motorola, Inc. ON Semiconductor
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