| PART |
Description |
Maker |
| 2SC4666 E000970 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER/ SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER SWITCHING APPLICATIONS)
From old datasheet system
AUDIO FREQUENCY AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4738F |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3665 |
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC732TM E001075 |
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Mitsubishi Electric Semiconductor
Toshiba Semiconductor
|
| 2SC466607 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2458 2SC245803 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01FU E001968 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4210 2SC421003 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
TOSHIBA
|
| HN1B01F07 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4207 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC4944 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
TOSHIBA
|
