PART |
Description |
Maker |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro... NXP Semiconductors
|
BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro... PHILIPS[Philips Semiconductors] NXP Semiconductors
|
3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS Vishay Siliconix
|