PART |
Description |
Maker |
RN4607 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1652 2SA1652K |
PNP epitaxial type silicon transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC[NEC] NEC Corp.
|
XN04381 XN4381 UN2122 UN2213 UNR2122 UNR2213 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits
|
PANASONIC[Panasonic Semiconductor]
|
UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
DMG964010R |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
2SA2102 |
Silicon PNP epitaxial planar type 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic, Corp. Panasonic Semiconductor
|
RN4609 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA
|
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
RT1A3906-T122 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Cor... Isahaya Electronics Corporation
|