| PART |
Description |
Maker |
| MSC23S4641E-8BS16 |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (2BANK)(4M字4位同步动态RAM模块)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (2BANK)(4M字64位同步动态RAM模块)
|
OKI SEMICONDUCTOR CO., LTD.
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| MSC23S2720E-8BS9 MSC23S2720E |
2,097,152 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
|
OKI[OKI electronic componets]
|
| IDT74SSTV16857 IDT74SSTV16857PA IDT74SSTV16857PAG |
14-BIT REGISTERED BUFFER WITH SSTL I/O
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| PI3B3863Q PI3B3863L PI3B3863 |
3.3V, 10-Bit, 2-Port BusSwitch with SSTL-2 Enable
|
PERICOM[Pericom Semiconductor Corporation]
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| SSTV16859GX |
Dual Output 13-Bit Register with SSTL-2 Compatible I/O and Reset
|
Fairchild Semiconductor
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| FM22L16 FM22L16-55-TG |
4Mbit FRAM Memory
|
ETC
Ramtron International Corporation
|
| KM416S1021C KM416S1021CT-G7 KM416S1021CT-G8 KM416S |
512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface 12k × 16 × 2银行同步DRAM接口的萨里卫星技术有限公
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| ICS1524 ICS1524M ICS1524MT |
From old datasheet system
Dual Output Phase Controlled SSTL-3/PECL Clock Generator
|
Integrated Circuit Systems
|
