| PART |
Description |
Maker |
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| MJE18002-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007-P |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| FA5332P FA5332PM FA5331P FA5331PM FA5332M FA5331M |
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 220 kHz SWITCHING FREQ-MAX, PDIP16
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 150 kHz SWITCHING FREQ-MAX, PDIP16
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SD2115 2SD2115L 2SD2115S |
Bipolar power switching transistor
Silicon NPN Epitaxial Planar(Low frequency power amplifier)
|
HITACHI[Hitachi Semiconductor]
|
| MJE18204 MJF18204 ON2025 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
From old datasheet system
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| FA7615CP FA7615CPE |
FA7615CPE Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION
|
TOSHIBA
|
