| PART |
Description |
Maker |
| MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| 2N8768 |
N-Channel Power MOSFETs 30 A,150 V/200 V
|
New Jersey Semi-Conductor Products, Inc.
|
| MBRF20H150CTG MBR20H150CTG |
20 A,150 V H-Series Dual Schottky Rectifier 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
SWITCHMODE?/a> Power Rectifier 150 V, 20 A
SWITCHMODE Power Rectifier 150 V, 20 A
SWITCHMODE垄芒 Power Rectifier 150 V, 20 A
|
ON Semiconductor
|
| MJE341 ON2033 MJE344 |
0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MBRF20200CT_D MBRF20200CT ON0449 |
SWITCHMODESchottky Power Rectifirer
SWITCHMODE⑩ Schottky Power Rectifirer
From old datasheet system
SWITCHMODE Schottky Power Rectifirer
20 AMPERES 150 and 200 VOLTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| TDM15002D |
150 A, 200 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
| APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IMT200-150-10 IMT200-150-12 |
Input voltage 100-150-200 VDC;output voltage 10 VDC;output current:20 mA; 200-480 W full brick DC to DC converter
Input voltage 100-150-200 VDC;output voltage 12 VDC;output current:17 mA; 200-480 W full brick DC to DC converter
|
FranMar International
|
| 3102F |
200 V three phase bridge 2 A forward current, 150 ns recovery time
|
Voltage Multipliers
|
| SHM120F |
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc.
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
