| PART |
Description |
Maker |
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| KSE80001 KSE802 KSE803 KSE800 |
Monolithic Construction With Built-in Base-Emitter Resistors
|
Fairchild Semiconductor
|
| 2SB852 |
Darlington connection for high DC current gain. between base and emitter.
|
TY Semiconductor Co., Ltd
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| TIP142F TIP141F TIP140F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
Power Innovations Limited
FAIRCHILD[Fairchild Semiconductor]
|
| BSS63R |
SOT23 PNP silicon planar Emitter-base voltage VEBO -6 V
|
TY Semiconductor Co., Ltd
|
| NTE99 |
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
|
NTE[NTE Electronics]
|
| BC847BLD-7 BC847BLD |
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
|
Diodes Inc.
DIODES[Diodes Incorporated]
|
| MJ10005 |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
New Jersey Semi-Conduct...
|
| TIP142 TIP140 TIP141 TIP142TU |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
NPN Epitaxial Silicon Darlington Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
http://
FAIRCHILD[Fairchild Semiconductor]
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
