| PART |
Description |
Maker |
| IDT72T40108L6-7BB IDT72T40118L6-7BB IDT72T40118L6- |
64K x 40 TeraSync DDR FIFO, 2.5V
128K x 40 TeraSync DDR FIFO, 2.5V
2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION
16K x 40 TeraSync DDR FIFO, 2.5V
32K x 40 TeraSync DDR FIFO, 2.5V
|
IDT
|
| SSTV16859DGG SSTV16859BS SSTV16859EC |
2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM
|
NXP Semiconductors
|
| ICSSSTV32852YHT |
DDR 24-Bit to 48-Bit Registered Buffer 复员24位到48位注册缓冲区
|
Electronic Theatre Controls, Inc.
|
| ICS16859 ICSSSTV16859YG-T ICSSSTV16859YGLF-T |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO64 6.10 MM, 0.50 MM PITCH, TSSOP-64
DDR 13-Bit to 26-Bit Registered Buffer
|
Integrated Device Technology, Inc.
Integrated Circuit Systems
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate)
8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SLGSSTVF16859H |
DDR 13 to 26 Bit Registered Buffer
|
Silego
|
| M14D2561616A-2.5BG M14D2561616A-3BG |
4M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
