| PART |
Description |
Maker |
| Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY55-02W BBY5502W Q62702-B0913 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（极好的线性高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY26-S1 BBY24 Q62702-B23-S2 BBY24-BBY27 BBY24-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) 硅调谐变容二极管（突变结调谐二极管调谐范20伏）
1 UF 10% 25V X7R (1206) CHIP CAP TR
RESISTOR, 1% SMT 0603
From old datasheet system
|
SIEMENS A G
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KDV1472 |
FM Tuning
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING)
Negative Fixed Linear Voltage Regulators; Package: TO-99; VDIFF (V): 35; IOUT (A): 1.5;
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| BBY57-03W |
Silicon High Q Hyperabrupt Tuning Diode
|
Infineon
|
| KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| SVC222 |
Varactor Diode for FM Receiver Electronic Tuning Use
Diffused Junction Silicon Diode
|
SANYO[Sanyo Semicon Device]
|
