| PART |
Description |
Maker |
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MP6404 |
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications
|
TOSHIBA
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| GT80J101 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ200 |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT40T101 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
Toshiba Semiconductor
|
| RJM0603JSC RJM0603JSC-15 |
Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJM0404JSC RJM0404JSC-15 |
Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK349706 2SK3497 |
Silicon N Channel MOS Type High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION
|
TOSHIBA
|
