| PART |
Description |
Maker |
| RJK1206JPD RJK1206JPD-00-J3 |
120 V - 30 A - N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK1274 2SK1274-T |
N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| 2SK3273-01MR |
N-channel MOS-FET
N-channel MOS-FET 70 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
|
| 2SK3576 2SK3576-T1B 2SK3576-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPA678TB |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
P-Channel enhancement MOS FET for load sw
|
NEC Corp.
|
