PART |
Description |
Maker |
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
MT4C4256 MT4C4256-8 MT4C4256-12 MT4C4256-10 |
256K X 4RAM(FAST PAGE MODE) 256K x 4 DRAM
|
ETC[ETC] Austin Semiconductor List of Unclassifed Manufacturers
|
UPD42S4263AG5-80 UPD42S4263AV-70 UPD42S4263ALE-60 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40 256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40 256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
|
V53C104HP45 |
256K X 4 FAST PAGE DRAM, 45 ns, PDIP20
|
MOSEL-VITELIC
|
M5M44256AJ-8T |
256K X 4 FAST PAGE DRAM, 80 ns, PDSO20
|
|
V104J9SU80 V104J9SU80L |
256K X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30
|
MOSEL-VITELIC
|
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
MB81C4256A |
256K x 4-Bit Fast Page Mode Low Power DRAM
|
Fujitsu Media Devices
|
AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM(扩展数据总线
|
Alliance Semiconductor Corporation
|