| PART |
Description |
Maker |
| FM27C040 FM27C040X120 FM27C040X150 FM27C040X90 |
4,194,304-Bit (512K x 8)High Performance CMOS EPROM
|
Fairchild Semiconductor
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]
4,194,304-Bit (256k x 16) High Performance CMOS EPROM
4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM
4,194,304位（256k × 16）高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
| VG26S17405J-5 VG26S17405J-6 VG26V17405J-5 VG26V174 |
4,194,304 x 4 - Bit CMOS EDO Dynamic RAM
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG2617400DJ-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
Powerchip
|
| TC514100AJ TC514100AP TC514100ASJ TC514100AZ-60 |
4,194,304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55V4400FT-10 TC55V4400FT-12 TC55V4400FT-15 |
4,194,304-WORD BY 4-BIT CMOS STATIC RAM
4.194,304-WORD BY 4-BIT CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM6684B |
4,194,304-word x 1-bit Serial Register(4M×1串行话音寄存
|
OKI SEMICONDUCTOR CO., LTD.
|
| AK58256 |
4,194,304 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| MSC23S4641E-8BS16 |
4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI electronic components
OKI electronic componets
|
