| PART |
Description |
Maker |
| HY5DW283222AF HY5DW283222AF-22 HY5DW283222AF-25 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU573222AFM-36 HY5DU573222AFM-28 HY5DU573222AFM |
GDDR SDRAM - 256Mb
|
Hynix Semiconductor
|
| K4D553235F-GC33 K4D553235F-GC K4D553235F-GC25 K4D5 |
256M GDDR SDRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263 |
128Mbit GDDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU561622CTP |
256M gDDR SDRAM
|
Hynix
|
| W9412G2CB |
1M 】 4 BANKS 】 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU561622ETP HY5DU561622ETP-28 HY5DU561622ETP-33 |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DW283222BF HY5DW283222BF-2 HY5DW283222BF-22 HY5 |
128M(4Mx32) GDDR SDRAM
4M X 32 DDR DRAM, 0.6 ns, PBGA144 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144
|
Hynix Semiconductor, Inc.
|
| K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
