PART |
Description |
Maker |
SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd. Seme LAB
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
HI1-0518-5 HI1-0518-8 HI3-0518-5 HI-518 FN3147 |
8-Channel/Differential 4-Channel,CMOS high speed andlog multiplexer 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP18 RESISTOR POWER 125 OHM 8W 5% 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP18 8-Channel/Differential 4-Channel/ CMOS High Speed Analog Multiplexer 64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 8-Channel/Differential 4-Channel, CMOS High Speed Analog Multiplexer 8-Channel/Differential 4-Channel CMOS High Speed Analog Multiplexer From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03 |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
STK417-130 STK417-000 STK417-090 STK417-0X0 |
2 CHANNEL HIGH EFFICIENCY AF POWER AMPLIFIER 2-Channel High Effiency AF Power Amplifier 50W x 2 ~ 100W X 2
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
RJJ0101DPD-00-J2 RJJ0101DPD |
5 A, 12 V, 0.093 ohm, P-CHANNEL, Si, POWER, MOSFET MP-3A, SC-63, 3 PIN P Channel Power MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
SML10B75XX |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
SML60S18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
|
TT electronics Semelab, Ltd. Seme LAB
|