Part Number Hot Search : 
G1201 34A10 001SM TA8680 102M1 2SC51 88523 SMG2300
Product Description
Full Text Search

HYS64V8220GCU-10 - 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module

HYS64V8220GCU-10_212252.PDF Datasheet

 
Part No. HYS64V8220GCU-10 HYS64V8220GCU-8 HYS72V8220GCU-10 HYS72V8220GCU-8 HYS72V4200GCU-10 HYS72V4200GCU-8 HYS64V4200GCU-10 HYS64V4200GCU-8
Description 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module

File Size 77.28K  /  15 Page  

Maker

Infineon



Homepage
Download [ ]
[ HYS64V8220GCU-10 HYS64V8220GCU-8 HYS72V8220GCU-10 HYS72V8220GCU-8 HYS72V4200GCU-10 HYS72V4200GCU-8 H Datasheet PDF Downlaod from Datasheet.HK ]
[HYS64V8220GCU-10 HYS64V8220GCU-8 HYS72V8220GCU-10 HYS72V8220GCU-8 HYS72V4200GCU-10 HYS72V4200GCU-8 H Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for HYS64V8220GCU-10 ]

[ Price & Availability of HYS64V8220GCU-10 by FindChips.com ]

 Full text search : 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module


 Related Part Number
PART Description Maker
HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
Elpida Memory, Inc.
HM5216805 HM5216805LTT-10H HM5216805TT-10H HM52168 16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword ? 8-bit ? 2-bank/2-Mword ? 4-bit ? 2-bank
Hitachi Semiconductor
HM5259165B HM5259165B-75 HM5259165B-A6 HM5259165BT 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
ELPIDA[Elpida Memory]
HM5257165B HM5257405B-A6 HM5257805BTD-A6 HM5257165 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword ?16-bit ?4-bank/16-Mword ?8-bit ?4-bank /32-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
Elpida Memory
HM5216808CSERIES 5216808C 1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM (SSTL-3) 2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM (SSTL-3)
From old datasheet system
hitachi
K5T6432YT K5T6432YTM-T310 64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
MD56V62400H MD56V62400 4-Bank x 4194304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
OKI electronic components
OKI[OKI electronic componets]
IDT70V7278S HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
Integrated Device Technology
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
MB81EDS51654510 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
Fujitsu Component Limited.
 
 Related keyword From Full Text Search System
HYS64V8220GCU-10 Stereo HYS64V8220GCU-10 texas HYS64V8220GCU-10 read HYS64V8220GCU-10 mode HYS64V8220GCU-10 maker
HYS64V8220GCU-10 IC DATA SHET HYS64V8220GCU-10 battery charger circuit HYS64V8220GCU-10 Transistors HYS64V8220GCU-10 参数 封装 HYS64V8220GCU-10 GaAs Hall Device
 

 

Price & Availability of HYS64V8220GCU-10

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.14418601989746