| PART |
Description |
Maker |
| IR3476M IR3476MTR1PBF |
12A Programmable High Freq Sync Buck Regulator with onboard constant on time hysteretic controller and MOSFETs
|
International Rectifier
|
| EDI2CG472256V EDI2CG472256V10D2 EDI2CG472256V12D2 |
8 Megabyte Sync/Sync Burst, Dual Key DIMM
|
White Electronic Designs Corporation
|
| EDI2AG272128V10D1 EDI2AG272128V9D1 EDI2AG272128V12 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
| EDI2AG272129V10D1 EDI2AG272129V12D1 EDI2AG272129V9 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
| WT9051 |
SYNC signal processor for Multi-Sync display
|
Weltrend
|
| WT9051 |
Sync Singal Processor for Multi-Sync Display
|
Weltrend Semiconductor
|
| GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS |
225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM
250MHz 6ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 2M x 18 36Mb sync NBT SRAM
166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
150MHz 10ns 2M x 18 36Mb sync NBT SRAM
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM
166MHz 7ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 1M x 36 36Mb sync NBT SRAM
150MHz 10ns 1M x 36 36Mb sync NBT SRAM
166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM
200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM
225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM
250MHz 6ns 1M x 36 36Mb sync NBT SRAM
|
GSI Technology
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| EL4511 |
Video SYNC Separator, DTV HDTV And Projector, Tri-level & Bi-level Auto Sync, 150kHz Line Rate, 3.3V And 5V
|
INTERSIL
|
| GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| MC14536 MC14536B MC14536BCP MC14536BDW MC14536BDWR |
Programmable Timer
Programmable Timer 1 TIMER(S), PROGRAMMABLE TIMER, PDSO16
Programmable Timer 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP DIVIDE BY N COUNTER, PDIP16
|
ONSEMI[ON Semiconductor]
|
