PART |
Description |
Maker |
MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
ESLB-P245BA-X |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
Hitachi
|
MGFC42V4450A |
4.4-5.0 GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFK37V4045_97 MGFK37V4045 MGFK37V404597 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
ESLT-S245E |
2012 Size 2.4/2.5GHz Band Chip Multilayer RF Transformer
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
RF5745PCK-410 |
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler 1.5GHz 10 Prescaler 1.5GHz ± 10 Prescaler MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
|
Mitel Semiconductor MITEL[Mitel Networks Corporation]
|