PART |
Description |
Maker |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|
FZ1200R17KE3 |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
|
APTGT200DH120G |
Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BSM50GD120DN2G C67070-A2521-A67 050D12G2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MIG150Q201H |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
BSM150GT12 BSM150GT120DN2 150T12N2 C67070-A2518-A6 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT IGBT MODULE IGBT模块
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|