| PART |
Description |
Maker |
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| 28F640J3A 28F128J3A 28F320J3A |
3 Volt Intel StrataFlash Memory(3 V 64M位英特尔StrataFlash存储
3 Volt Intel StrataFlash Memory(3 V 128M位Strata闪速存储器)
3 Volt Intel StrataFlash Memory(3 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
| 28F320J5 28F640J5 29060613 |
5 Volt Intel StrataFlash Memory
From old datasheet system
|
Intel
|
| RD48F3000L0ZTQ0 |
1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, PBGA80
|
Intel, Corp.
|
| GE28F640L30T85 GE28F640L30B85 GE28F640L30B110 GE28 |
1.8 Volt Intel StrataFlash? Wireless Memory with 3.0-Volt I/O (L30)
|
Intel Corporation
|
| JS28F256P30B95A RD48F4000P0ZBQ0 JS28F128P30T85A TE |
Numonyx StrataFlash Embedded Memory
Numonyx?StrataFlash? Embedded Memory (P30)
|
Micron Technology
Numonyx B.V
|
| JS48F4400P0R0C0 JS48F4400P0R0Q0 JS48F4400P0R0W0 JS |
StrataFlash垄莽 Cellular Memory
StrataFlash庐 Cellular Memory
StrataFlash? Cellular Memory
StrataFlash? Cellular Memory
|
Numonyx B.V
http://
|
| PC28F128P30 |
StrataFlash Embedded Memory
|
Intel Corporation
|
| PC28F128G18XX |
StrataFlash Embedded Memory
|
Micron
|
| PC28F256G18AF PC28F256G18AE PC28F128G18FF PC28F00A |
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
|
Micron Technology
|
| 28F320D18 |
1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 双平面闪速存储器) 1.8 V的英特尔双平面闪存（1.8伏英特尔双平面闪速存储器
|
Intel, Corp.
|
