PART |
Description |
Maker |
5962F9863101VXC ACS30K ACS21D ACS30KMSR-03 ACS21K |
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, CDFP14 Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, UUC11 RES, NETWORK SMT 100R 5% 1/16W 25V, 0603X4 Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp. Intersil Corporation
|
MC74HC32A MC74HC32AD MC74HC32ADR2 MC74HC32ADT MC74 |
Quad 2-Input OR Gate HC/UH SERIES, QUAD 2-INPUT OR GATE, PDSO14 Quad OR Gate Quad 2-Input OR Gate High-Performance Silicon-Gate CMOS
|
ONSEMI[ON Semiconductor]
|
M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681 Triple 3-input NAND Gate 3输入与非 Quad 2-input NAND Gate 输入与非 Single 8-input NAND Gate 输入与非 Dual 4-input NAND Gate 输入与非 Triple 3-input NAND Gate 输入与非 Dual 4-input NAND Gate 4输入与非
|
ITT, Corp. Astrodyne, Inc. Ecliptek, Corp. Electronic Theatre Controls, Inc. Bourns, Inc. Newhaven Display International, Inc. Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
|
TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array 300 usable gate, 1.5 micron, CMOS gate array 700 usable gate, 1.5 micron, CMOS gate array 4 K usable gate, 1.0 micron, CMOS gate array 500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
AP2308GEN-HF AP2308GEN-HF-14 |
Capable of 2.5V Gate Drive, Lower Gate Charge Fast Switching Performance
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
MC74HC10A |
Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS
|
ON Semiconductor
|
KK74ACT20 KK74ACT20D KK74ACT20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge Fast Switching Performance
|
Advanced Power Electronics Corp.
|
KK74ACT10 KK74ACT10N KK74ACT10D |
Triple 3-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|