| PART |
Description |
Maker |
| GVT7264A16 7264A16S |
REVOLUTIONARY PINOUT 64K X 16
From old datasheet system
|
Galvantech
|
| GVT7364A16 7364A16S |
REVOLUTIONARY PINOUT 64K X 16
From old datasheet system
|
Galvantech
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| GVT72256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
| IDT71124 IDT71124S12Y IDT71124S12YI IDT71124S15Y I |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
128K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16
From old datasheet system
|
Galvantech
|
| GVT73512A8 73512A8S |
REVOLUTIONARY PINOUT 512K X 8
From old datasheet system
|
Galvantech
|
| AS5C512K8F-15 AS5C512K8F-15L_883C AS5C512K8F-17 AS |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
|
ETC
AUSTIN[Austin Semiconductor]
|
| KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A- |
64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out
CMOS SRAM
|
Samsung Electronic
Samsung semiconductor
|
| IDT71128 IDT71128S12Y IDT71128S12YI IDT71128S15Y I |
Precision Adjustable (Programmable) Shunt Reference 8-SOIC -40 to 125
Precision Adjustable (Programmable) Shunt Reference 8-TSSOP -40 to 125
CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout
256K x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40
64K X 16 OTPROM, 100 ns, PQCC44
64K X 16 OTPROM, 100 ns, PDIP40
64K X 16 UVPROM, 100 ns, CDIP40
64K X 16 UVPROM, 45 ns, CDIP40
1 MBIT (64KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
