| PART |
Description |
Maker |
| M48Z2M1V 5135 M48Z2M1Y-70PL1 M48Z2M1-70PL1 M48Z2M1 |
16 MBIT (2MB X 8) ZEROPOWER SRAM
From old datasheet system
|
STMicroelectronics
SGS Thomson Microelectronics
|
| M48Z512A M48Z512A-70CS1 M48Z512A-70CS9 M48Z512A-70 |
CAP,TANT,CHIP,4.7UF,10%,25V
4 Mbit 512Kb x8 ZEROPOWER SRAM 4兆位的SRAM 512KB的x8 ZEROPOWER
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M48Z59Y M48Z59 |
64Kb (8K x 8) ZEROPOWER SRAM(64K零功耗SRAM)
64Kb (8K x 8) ZEROPOWER ? SRAM
|
意法半导
STMicro
|
| GS72116J-15 GS72116U-15I GS72116TP-15I GS72116J-8I |
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
GSI Technology, Inc.
|
| HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| M48Z512AY M48Z512A |
4 Mbit (512Kb x8) ZEROPOWER ? SRAM
|
STMicro
|
| M48Z08-100PC1 M48Z18-100PC1 |
64 Kbit (8KBit X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M48Z32V M48Z32V-35MT6 M48Z32V-35MT6E M48Z32VMT M48 |
32K X 8 NON-VOLATILE SRAM, 35 ns, PDSO44
3.3V, 256 KBIT 32 KBIT X 8 ZEROPOWER SRAM
|
STMICROELECTRONICS[STMicroelectronics]
http://
|
| C4123 C5334 C4124 C4133 C4323 C4134 C4324 C3323 C1 |
MEMS digital output motion sensor ultra low-power high performance 3-axes "nano" accelerometer
18-STAGE STATIC SHIFT REGISTER
MEMS digital output motion sensor ultra low-power high performance 3-axes nano accelerometer
MEMS inertial sensor 3-axis ultracompact linear accelerometer
MEMS inertial sensor: 3-axis - ± 2g/± 6g digital output low voltage linear accelerometer
LOW DROP POWER SCHOTTKY RECTIFIER
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions
Memory tag IC at 13.56 MHz, with 64-bit unique ID and WORM user area, ISO 15693 and ISO 18000-3 Mode 1 compliant
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
Turbo 2 ultrafast high voltage rectifier
5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM
Dual decade counter
3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM
Analog multiplexer/demultiplexer with address latch : single 8 channel
5.0V or 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Quad bilateral switch
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER® SRAM
Dual J-K flip flop with preset and clear
4-bit magnitude comparator
2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant
MEMS inertial sensor: 3-axis - /-2g/6g ultracompact linear accelerometer 光电
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory 光电
|
NXP Semiconductors N.V.
STMicroelectronics N.V.
|
| M48Z35 |
256 Kbit 32Kb x8 ZEROPOWER SRAM
|
STMicroelectronics
|
| MK48Z09B100 |
100ns; 1W; 20mA; V(dd): -0.3 to 7.0V; CMOS 8K x 8 zeropower SRAM
|
SGS Thomson Microelectronics
|
