| PART |
Description |
Maker |
| TLP813 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| RPI-352 A5800742 |
Sensors > Photointerrupters > Linear Phototransistor output
Photointerrupter, double-layer mold type
From old datasheet system
Photointerrupter/ double-layer mold type
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| KP-3216F3C KP-3216SF4C |
INFRA-RED EMITTING DIODES
|
Kingbright Corporation
|
| ZME50 |
INFRA-RED EMITTING DIODE
|
Diodes Incorporated
Zetex Semiconductors
|
| GP1S94 |
Subminiature Wide-gap Type Photointerrupter
Subminiature Wide- Photointerrupter
|
SHARP[Sharp Electrionic Components]
|
| RPI-221 |
Sensors > Photointerrupters > Linear Phototransistor output
Photointerrupter, double-layer mold type
Photointerrupter/ double-layer mold type
|
Rohm CO.,LTD.
|
| W34F3C |
T-1 (3mm) INFRA-RED EMITTING DIODE
|
Kingbright Corporation
|
| WP7113SF6C |
T-1 3/4 (5mm) INFRA-RED EMITTING DIODE
|
KINGBRIGHT[Kingbright Corporation]
|
| IRPS |
Infra Red reflective proximity sensor
|
Radiometrix Ltd
|
| WP34F3C |
T-1 (3mm) INFRA-RED EMITTING DIODE
|
KINGBRIGHT[Kingbright Corporation]
|
| WP34SF6C |
T-1 (3mm) INFRA-RED EMITTING DIODE
|
KINGBRIGHT[Kingbright Corporation]
|
