| PART |
Description |
Maker |
| UPD72042A UPD72042AGT UPD72042B UPD72042BGT |
LSI DEVICES FOR Inter Equipment BusTM (IEBusTM) PROTOCOL CONTROL
|
NEC[NEC]
|
| UPD72042A UPD72042B UPD72042AGT UPD72042BGT |
LSI DEVICES FOR Inter Equipment BusTM (IEBusTM) PROTOCOL CONTROL LSI器件间设BusTM（IEBusTM）协议控
|
http://
NEC, Corp.
NEC Corp.
|
| LC89602 |
Audio Decoder LSI for Mini-Disk Playback(?ㄤ?寰??纾????????棰?????LSI)
CMOS LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC74770 LC74770M 1701 |
On-Screen Display Controller LSI
CMOS LSI
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| CS8412 CS8411 |
DIGITAL AUDIO INTER FACE RECEIVER
|
Cirrus Logic
|
| LC895194 |
CMOS LSI
CD-ROM Error Correction LSI with On-Chip ATA-PI (IDE) Interface
|
SANYO[Sanyo Semicon Device]
|
| LC8955 |
CMOS LSI
CD-1 Format ADPCM Data Replay LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AN0015 |
Design of “PI and “T Network Attenuators for Inter-Stage Buffering
|
RF Micro Devices
|
| LC73862 LC73861 |
CMOS LSI
DTMF Receiver LSI
|
SANYO[Sanyo Semicon Device]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
