PART |
Description |
Maker |
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc. Sirenza Microdevices, Inc.
|
HMC801LP3E |
15 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
|
Hittite Microwave Corporation
|
HMC800LP3E |
10 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
|
Hittite Microwave Corporation
|
HMC345LP3 |
GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH/ DC - 8.0 GHz GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
HMC305LP410 |
0.5 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.8 GHz
|
Hittite Microwave Corporation
|
HMC467LP3E |
2 dB LSB GaAs MMIC 2-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 6 GHz
|
Hittite Microwave Corporation
|
HMC467LP3 |
2 dB LSB GaAs MMIC 2-BIT DIGITAL POSITIVE CONTROL ATTENUATOR/ DC - 6.0 GHz
|
Hittite Microwave Corporation
|
HMC542LP4 HMC542LP4E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 3.0 GHz
|
Hittite Microwave Corporation
|