| PART |
Description |
Maker |
| BSP317Q67000-S94 |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
|
EM Microelectronic
|
| STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMicroelectronics
|
| IRSF3021 2426 IRSF3021L |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | SOT-223
From old datasheet system
FULLY PROTECTED POWER MOSFET SWITCH
|
International Rectifier
|
| NTF3055-100 NTF3055-100T3G |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V逻辑电平,N通道 SOT-223 封装的功率MOSFET)
Power MOSFET 3.0 Amps 60 Volts N−Channel
|
ON Semiconductor
|
| STN2NF10 |
N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET II POWER MOSFET
N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.23 OHM - 2A SOT-223 STRIPFET II POWER MOSFET
|
STMicroelectronics
ST Microelectronics
|
| BSP43T/R |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SOT-223 晶体管|晶体管|叩| 80V的五（巴西）总裁| 1A条一（c）|的SOT - 223
|
BCD Semiconductor Manufacturing, Ltd.
|
| BFG198T/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-223 晶体管|晶体管|叩| 10V的五（巴西）总裁| 100mA的一（c）|的SOT - 223
|
Pulse Engineering, Inc.
|
| NDT454P NDT454 NDT454PJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| NDT452 NDT452AP NDT452APJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STN2NE06 6364 |
From old datasheet system
N-CHANNEL 60V - 0.18 - 2A - SOT-223 STripFET TM POWER MOSFET
N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
