| PART |
Description |
Maker |
| HYE18L256160BFX-7.5 HYE18L256160BCX-7.5 HYB18L2561 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
| HYB18M1G320BF HYE18M1G320BF-7.5 HYB18M1G320BF-7.5 |
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM 8M X 32 DDR DRAM, 6.5 ns, PBGA90
|
Qimonda AG
http://
|
| HYE18L256160BC-75 HYB18L256160BF HYB18L256160BC-75 |
DRAMs for Mobile Applications
|
INFINEON[Infineon Technologies AG]
|
| HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04
Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04
16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HT150RS HT450RB MD821RC MX800RC SFU821RC MX150RS |
450 MHz - 470 MHz MOBILE STATION ANTENNA
821 MHz - 896 MHz MOBILE STATION ANTENNA
806 MHz - 866 MHz MOBILE STATION ANTENNA
150 MHz - 162 MHz MOBILE STATION ANTENNA
|
|
| HYB39L128160AC-7.5 HYB39L128160AT-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
|
Infineon
|
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| LPCTP-1 |
Mobile Mobile Phones Portable Radio Portable Satellite PDA
|
ITT Industries
|
