| PART |
Description |
Maker |
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100
0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
(CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7B131 CY7B131-15 CY7B131-15JC CY7B131-20 CY7B131 |
From old datasheet system
1Kx8 Dual-Port Static RAM 1K X 8 DUAL-PORT SRAM, 15 ns, PQCC52
1Kx8 Dual-Port Static RAM 1K X 8 DUAL-PORT SRAM, 20 ns, PQCC52
Safety Sign; Legend:Danger Acid; External Height:10"; External Width:14"; Body Material:Aluminum; Color:Red/Black RoHS Compliant: NA 1K X 8 DUAL-PORT SRAM, 20 ns, PQCC52
|
Cypress Semiconductor Corp.
|
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| TC58FVT160 TC58FVB160FT-10 TC58FVB160FT TC58FVB160 |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24 |
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
|
Maxim Integrated Products
Atmel, Corp.
ON Semiconductor
TE Connectivity, Ltd.
|
| CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor
EEPROM
ON Semiconductor
NXP Semiconductors N.V.
|
| IDT7M1002 IDT7M1002S30G IDT7M1002S30GB IDT7M1002S3 |
16K x 32 CMOS DUAL-PORT STATIC RAM MODULE 16K X 32 MULTI-PORT DEVICE SRAM MODULE, 45 ns, PMA121
16K x 32 CMOS DUAL-PORT STATIC RAM MODULE 16K X 32 MULTI-PORT DEVICE SRAM MODULE, 45 ns, CPGA121
16K x 32 CMOS DUAL-PORT STATIC RAM MODULE 16K X 32 MULTI-PORT DEVICE SRAM MODULE, 30 ns, CPGA121
|
IDT
Integrated Device Technology, Inc.
|
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
16 MBIT CMOS FLASH MEMORY 16兆比特的CMOS闪存
|
Toshiba Corporation
Toshiba, Corp.
|
| SAE81C80A |
CMOS Dual Port RAM
|
Siemens
|
| IDT70V9079L15PF IDT70V9079L15PFI IDT70V9089L15PF I |
32K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
Small Signal Diode; Package: DO-35; No of Pins: 2; Container: Bulk
64K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
|
SRAM
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
