| PART |
Description |
Maker |
| AT12015-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| AT12017-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| MV1863D ASIMV1863D |
SILICON ABRUPT TUNING VARACTOR DIODE
|
ASI[Advanced Semiconductor]
ASI [Advanced Semiconductor]
|
| AT9019-10 AT901910 |
SILICON ABRUPT JUNCTION TUNING VARACTOR
From old datasheet system
Diode
|
Advanced Semiconductor
ASI
|
| PC115A |
From old datasheet system
SILICON ABRUPT TUNING VARACTOR
|
ASI[Advanced Semiconductor]
|
| AT6019-10 AT6017-10 AT601910 |
From old datasheet system
SILICON ABRUPT JUNCTION TUNING VARACTOR
|
ASI[Advanced Semiconductor]
|
| SMV1413-079LF SMV1413-074LF SMV1413-004LF SKYWORKS |
Abrupt Junction Tuning Varactors S BAND, 7.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| Q62702-B195 BBY35F Q62702-A775 |
From old datasheet system
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
|
