| PART |
Description |
Maker |
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| FLM3135-12F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM3135-18F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM0910-3F |
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM1011-3F |
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
