| PART |
Description |
Maker |
| NJG1712KC1 |
CDMA/AMPS RX FRONT-END GaAs MMIC
|
NJRC[New Japan Radio]
|
| AWT6137M7P8 AWT6137 |
HELP Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module 帮助蜂窝双模的AMPS / CDMA.4V/28dBm线性功率放大器模块
The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/1XRTT amplifier designed specifically for Cellular wireless ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1 |
1.5/1.9GHz BAND FRONT-END GaAs MMIC
|
NJRC[New Japan Radio]
|
| HMC309MS804 |
GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH
|
Hittite Microwave Corporation
|
| CFH77 |
GaAs HEMT for low noise front end amp...
|
Infineon
|
| NJG1709KC1-L4 NJG1709KC1-L6 NJG1709KC1-C7 NJG1709K |
1.5/1.9GHz BAND FRONT-END GaAs MMIC 1.5/1.9GHz频前端砷化镓微波单片集成电路
|
New Japan Radio Co., Ltd.
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| NJG1707PG1 NJG1707PG1-C1 NJG1707PG1-C10 NJG1707PG1 |
800MHz TDMA FRONT-END GaAs MMIC 800MHz的TDMA的前端砷化镓微波单片集成电路
PUSH-PULL SWITCH (SEALED)
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
|
| AD73311ARS AD73311ARZ AD73311LARUZ-RL7 |
Low Cost/ Low Power CMOS General Purpose Analog Front End
Single-Channel, 3 V and 5 V Front-End Processor for General Purpose Applications Including Speech and Telephony; Package: SOIC - Wide; No of Pins: 20; Temperature Range: Industrial SPECIALTY TELECOM CIRCUIT, PDSO20
Low Cost, Low Power CMOS General Purpose Analog Front End
|
Analog Devices, Inc.
|
| Q62703-F108 Q62703-F106 CFY25 Q62703-F107 CFY25-17 |
From old datasheet system
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
SIEMENS[Siemens Semiconductor Group]
|
| AD9860 AD9860-EB AD9860BSTRL AD9862 AD9862-EB AD98 |
Mixed-Signal Front-End (MxFE? Processor for Broadband Communications
10-/12-Bit Mixed Signal Front-End (MxFE? Processor for Broadband Communications
10-/12-Bit Mixed Signal Front-End (MxFE™) Processor for Broadband Communications
12-/14-Bit Mixed Signal Front-End (MxFE? Processor for Broadband Communications
12-/14-Bit Mixed Signal Front-End (MxFE™) Processor for Broadband Communications
12-/14-Bit Mixed Signal Front-End (MxFE Processor for Broadband Communications
Mixed-Signal Front-End (MxFE Processor for Broadband Communications SPECIALTY TELECOM CIRCUIT, PQFP128
Mixed-Signal Front-End (MxFE Processor for Broadband Communications 混合宽带通信信号前端MxFE⑩）处理
|
Analog Devices, Inc.
|
| AD9975 AD9975ABST AD9975ABSTRL AD9975ABSTEB AD9975 |
Integrated Single Supply Broadband Modem Mixed Signal Front End (MxFE™)
Broadband Modem Mixed-Signal Front End
|
AD[Analog Devices]
|
