| PART |
Description |
Maker |
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五（巴西）国际消费电子展| 50A条一（c
|
Mitsubishi Electric, Corp.
|
| DIM250PHM33-TS000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| DIM400PHM17-A000-15 |
IGBT Half Bridge Module
|
Dynex Semiconductor
|
| SIM400D06AV3 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| SIM200D12SV3 |
HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
| SIM150D12SV3 |
“HALF-BRIDGE IGBT Module
“HALF-BRIDGE” IGBT Module
|
SemiWell Semiconductor
|
| BSM150GB120DN2E3166 150B12E2 C67076-A2112-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM100GB120DN2 100B12N2 C67076-A2107-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
