| PART |
Description |
Maker |
| HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 |
(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY27SS08121M HY27US16121M Y27US08121M |
Search --To HY27US081M
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
|
Hynix Semiconductor
|
| H5RS5223CFR-N0C H5RS5223CFR-11C H5RS5223CFR-14C H5 |
512Mbit (16Mx32) GDDR3 SDRAM
|
Hynix Semiconductor
|
| K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4 |
Stacked 512Mbit SDRAM 堆积512兆内
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB25D512800AT-7F |
512Mbit Double Data Rate SDRAM
|
Infineon Technologies A...
|
| HYB25D512160BE-6 HYB25D512800BE-5 HYB25D512160BC-5 |
512Mbit Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| H5MS5122DFR H5MS5132DFR |
Mobile DDR SDRAM 512Mbit (16M x 32bit)
|
Hynix Semiconductor
|
| HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
|
STMicroelectronics
|
| M65KA512AB8W3 M65KA512AB |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
