| PART |
Description |
Maker |
| BG3230 BG3230R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode 双N沟道MOSFET的四极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BGA2709 |
MMIC wideband amplifier BGA2709<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;
|
NXP Semiconductors N.V.
|
| AM29DL400T-80EE AM29DL400T-80EI AM29DL400T-80FC AM |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7306 with Standard Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7306 with Lead Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7104 with Lead Free Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7303 with Standard Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380QPBF with Standard Packaging
30V N-Channel PowerTrench MOSFET
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9910 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Industrial version of our popular IRF7103PBF - standard packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7341 with Lead Free Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7101 with Lead Free Packaging
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7322D1TR with Lead Free Packaging on Tape and Reel
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7422D2 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9956 with Lead Free Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7301 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7331 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7103 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified; Similar to IRF7103Q with Lead-Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7750 with Standard Packaging
20V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7521D1 with Standard Packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market; Industrial version of our popular IRF7341PBF - standard packaging EEPROM
EEPROM EEPROM
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7380 with Lead Free Packaging
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7329 with Standard Packaging
|
Air Cost Control
Advanced Micro Devices, Inc.
|
| IRFR9010TRPBF FD9010 IRF03RU821K IRFU214PBF |
MOSFET P-CH 50V 5.3A DPAK
MOSFET P-CH 50V 1.1A 4-DIP
General Fixed Inductor, 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT
MOSFET N-CH 250V 2.2A I-PAK
|
Vishay Semiconductors
Vishay Dale
|
| GP1A38L7 GP1A38L5 |
MOSFET N-CH 60V 200MW SOT-323 多通道光电断路器海外私人投资公司与连接
ARRAY NPN TRANS/SW DIODE SOT363
Multi-channel OPIC Photointerrupter with Connector
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST |
60V Single N-Channel Hi-Rel MOSFET in a D3 package
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
50V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
50V Single N-Channel Hi-Rel MOSFET in a D3 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
IRF[International Rectifier]
|
| OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084
30V N-Channel PowerTrench MOSFET
|
|
| HM628512ALRRI-7 HM628512ALPI-8 HM628512ALRRI-8 HM6 |
Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
524288-word x 8-bit High Speed CMOS Static RAM 524288字8位高速CMOS静态RAM
|
Hitachi,Ltd.
|
| 2SB1268S 2SB1268R 2SB1269Q 2SB1135Q 2SB1269S 2SD19 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-221VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220VAR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体管|晶体管|叩| 50V五（巴西）总裁| 12A条一（c）|20
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 12A条一（c）|20VAR
|
Sanyo Electric Co., Ltd.
|
| FF100R06KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 600V的五（巴西）国际消费电子展| 100号A一（c）|米：HL080HD5.3
|
Infineon Technologies AG
|
| MBRB30H150CT-1 MBRF30H150CT MBR30H150CT MBR30H150C |
27PF 5% 50V NPO MLCC 0402 CAP,50V,NPO SMD, 0402
Dual High-Voltage Schottky Rectifiers, Forward Current 30A, Reverse Voltage 150V
Diodes
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
