| PART |
Description |
Maker |
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| DS2229 DS2229-85 |
Word-Wide 8 Meg SRAM Stik
|
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
| LC361000AMLL-10X LC361000ARLL-10X LC361000ATLL-10X |
1 MEG (131072 words x 8 bits) SRAM
|
Sanyo Electric Co., Ltd.
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| CM0-65608L-30R CM39-65608L-30 CM0-65608L-30SHXXX C |
128K X 8 STANDARD SRAM, 30 ns, PDIP32
128K X 8 STANDARD SRAM, 30 ns, UUC31 DIE
128K X 8 STANDARD SRAM, 35 ns, UUC31 DIE
|
Atmel, Corp.
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| K7A163631B |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
|
Samsung semiconductor
|
| HM065798H-2R HM465798H-2R HM065798H-2RD |
64K X 4 STANDARD SRAM, 25 ns, UUC24 DIE
64K X 4 STANDARD SRAM, 25 ns, CQCC28
|
Atmel, Corp.
|
