| PART |
Description |
Maker |
| 2SC3808 |
NPN Epitaxial Planar Silicon Transistors for High hFE, Low-Frequency General-Purpose Amplifier Applications(用于高直流电流增益，低频通用放大器应用的NPN硅外延平面型晶体 瑞展HFE的高硅，低晶体管频率通用放大器应用（用于高直流电流增益，低频通用放大器应用的npn型硅外延平面型晶体管
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co., Ltd.
|
| 2SC3807 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| CSB834 CSB834O CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y
|
Continental Device India Limited
|
| 2SC3807C |
2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| CSA1362Y |
0.200W Low Frequency PNP SMD Transistor. 15V Vceo, 0.800A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| 2SC3617 |
World standard miniature package. High hFE hFE=800 to 1600.
|
TY Semiconductor Co., Ltd
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
