| PART |
Description |
Maker |
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| MTP33N10E |
SPP Power NChannel
|
ON Semiconductor
|
| MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
MOTOROLA[Motorola, Inc]
|
| NTE2905 |
P?Ch, Enhancement Mode High Speed Switch
|
NTE Electronics
|
| ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 |
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package 安捷伦亚欧信托基 501P8高线性增强模式伪HEMT器件x2平方毫米的LPCC封装
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Avago Technologies, Ltd.
Agilent Technologies, Inc.
Agilent(Hewlett-Packard)
|
| NTE2941 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2377 |
MOSFET N-Channel, Enhancement Mode, High Speed
|
NTE[NTE Electronics]
|
| NTE2375 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2374 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2399 NTE2395 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
