| PART |
Description |
Maker |
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23C8105D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16)掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616LV8016 BS616LV8016FIP70 BS616LV8016FC BS616LV |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, Inc.
|
| BS616LV8010 BS616LV8010FIP55 BS616LV8010FIP70 BS61 |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
LM5010A High Voltage 1A Step Down Switching Regulator; Package: TSSOP EXP PAD; No of Pins: 14
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
LM5010A High Voltage 1A Step Down Switching Regulator; Package: LLP; No of Pins: 10 非常低功电压CMOS SRAM的为512k × 16
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
FLEX CONNECTOR, 12 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, TAPE & REEL PKG. RoHS Compliant: Yes
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| M38023E7 M38022E3 M38021E2 M38025M2 M38025M1 M3802 |
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
1-Ch. 10-Bit 1.25 MSPS ADC 8-Ch., DSP/SPI, Hardware Configurable, Low Power 24-SOIC -40 to 85
TRANS PREBIASED NPN 200MW SOT-23
Screwless Socket Brdg.(50 pk)
8-BIT SINGLE-CHIP MICROCOMPUTER
R1 单芯位CMOS微机
Single Output LDO, 500mA, Fixed(2.5V), Tight Output Accuracy of 2%, Thermal Overload Protection 20-TSSOP 0 to 125 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Sem...
http://
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AS6C8008 |
512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM
CMOS 256 KBit Low Power SRAM
CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
