| PART |
Description |
Maker |
| BS108 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS828 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| BS170 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS209 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| FDPF10N60NZ |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Fairchild Semiconductor
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2N2535N5 2N2535N3 2N2540N3 2N2540N5 2N2540N8 DN253 |
350V N-channel depletion - Mode vertical DMOS FET
400V N-channel depletion - Mode vertical DMOS FET
N-Channel Depletion-Mode Vertical DMOS FETs
|
Supertex Inc
|
| EMF9 |
Transistors > Complex Bipolar Transistors
From old datasheet system
Power management (dual transistors)
|
Rohm CO.,LTD.
|
