PART |
Description |
Maker |
HT82V732 |
60mA Audio Power Amp
|
Holtek Semiconductor Inc
|
2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
BS616LV2016 BS616LV201 BS616LV2016DC BS616LV2016EI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16 LM4935 Boomer ® Audio Power Amplifier Series Audio Sub-System with Dual-Mode Stereo Headphone & Mono High Efficiency Loudspeaker Amplifiers and Multi-Purpose ADC; Package: MICRO SMDXT; No of Pins: 49 非常低功电压CMOS SRAM28K的16 LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers; Package: MICRO SMDXT; No of Pins: 49 Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616LV2020DI BS616LV2020DC BS616LV2020AC BS616LV2 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable 非常低功电压CMOS SRAM28K的1656K × 8位开 LM4954 Boomer ® Audio Power Amplifier Series High Voltage 3 Watt Audio Power Amplifier; Package: MICRO SMD; No of Pins: 9 非常低功电压CMOS SRAM28K的1656K × 8位开
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, Inc.
|
TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC Max Power 43 W BTL ??4 ch Audio Power IC Max Power 43 W BTL 】 4 ch Audio Power IC IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC Max Power 43 W BTL × 4 ch Audio Power IC Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
HT82V73302 |
240mA Audio Power Amp
|
Holtek Semiconductor Inc
|
NTE1320 |
Integrated Circuit Module, Hybrid, Audio Power Amp, 25W, 2 Power Supplies Required
|
NTE[NTE Electronics]
|
KS2206B KS2206BN KA2206B |
The KA2206B is a monolithic intergrated dircuit consisting of a 2-channel power amplifier. 2.3W DUAL AUDIO POWER AMP
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
NTE1363 |
Integrated Circuit Audio Power Amp, 4.2W
|
NTE Electronics
|
S1A2206D01 S1A2206D01-H0B0 S1A2206D01-D0B0 |
4.6W AUDIO POWER AMP Data Sheet
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
BS616LV4015EI BS616LV4015 BS616LV4015AC BS616LV401 |
LM4992 Boomer ® Audio Power Amplifier Series 420mW Stereo Cell Phone Audio Amplifier; Package: LLP; No of Pins: 14 LM4992 Boomer ® Audio Power Amplifier Series 420mW Stereo Cell Phone Audio Amplifier; Package: LLP; No of Pins: 14 Very Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
NTE219 NTE130 |
Silicon Power Transistor Audio Power Amp / Medium Speed Switch Silicon Power Transistor Audio Power Amp, Medium Speed Switch
|
NTE[NTE Electronics]
|