PART |
Description |
Maker |
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
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INTERSIL[Intersil Corporation] Intersil, Corp.
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IRFU110 IRFR110 FN3275 |
From old datasheet system 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs (IRFR110 / IRFU110) N-Channel Power MOSFETs
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HARRIS SEMICONDUCTOR Intersil Corporation
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IRFD213 IRFD210 IRFD211 IRFD212 |
(IRFD210 - IRFD213) N Channel Power MOSFETs 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS
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Harris Semiconductor Harris Corporation
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IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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Freescale Semiconductor, Inc MOTOROLA
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400V 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
|
IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types Power MOSFETs Q-Class
|
IXYS Corporation
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HUFA75542P3 HUFA75542S3S HUFA75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 75A条(丁)|63AB 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
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Intersil, Corp. Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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ISL9N312AD3 ISL9N312AD3ST ISL9N312AD3STNL ISL9N312 |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs PS MEDICAL SWITCHING 12V 4.7A 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA POWER SUP SWITCHER 41W 24V MED 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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