| PART |
Description |
Maker |
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| MHW2707A1 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| MHW2707-1 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| 2SK2596BXTL-E 2SK259607 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers)
From old datasheet system
MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| KBA2338-WCSP KBA2338 |
3W F ilterless C lass-D Audio Power Amplifie r
|
Kingbor Technology Co
|
| 3SK318 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
