| PART |
Description |
Maker |
| K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D |
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7130SA20PF IDT7130SA25PF IDT7130SA IDT7130SA25C |
Dual Integrated Solenoid Driver; Package: MLP 8x12; No of Pins: 18; Container: Tape & Reel
30V N-Channel PowerTrench SyncFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CQFP48
Single P-Channel Logic Level PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
Single P-Channel Logic Level PowerTrench MOSFET 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQFP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQFP48
Asynchronous Communications Element With Autoflow Control 48-LQFP 0 to 70 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8
VALVE SHUT OFF 1/8 阀门关闭了1 / 8
VALVE STARTUP 1/2 阀门启 / 2
VALVE SHUT OFF 1/4 阀门关闭了1 / 4
VALVE SHUT OFF 3/4
VALVE STARTUP 1/4
IC SRAM 512KX36 2.5V SYN 100TQFP
VALVE SHUT OFF 1/2
BRACKET T
1-Mbit (128K x 8) Static RAM
IC MCU 8K FULL SPEED USB 28SDIP
BRACKET L
1M/512K FAST ASYNC SRAM
5V, 3.3V, ISR™ High-Performance CPLDs
256K (32K x 8) Static RAM
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
SPACER
EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
1-Mbit (64K x 16) Static RAM
2M x 8 Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture
BRANCH UNIT
|
AMIC Technology, Corp.
Vishay Intertechnology, Inc.
NXP Semiconductors N.V.
Harwin PLC
|
| CXK591000YM-55LL CXK591000TM CXK591000TM-10LL CXK5 |
131/072-word X 9-bit High Speed CMOS Static RAM
131,072-word X 9-bit High Speed CMOS Static RAM 131,072字9位高速CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131,072字9位高速CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IS61LV6424 IS61LV6424-10TQ IS61LV6424-9TQ IS61LV64 |
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K6R4016V1C |
256Kx16 Bit High Speed Static RAM
|
Samsung semiconductor
|
