PART |
Description |
Maker |
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
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TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
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Toshiba Corporation Toshiba, Corp.
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27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
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Macronix International Co., Ltd.
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S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 CONNECTOR ACCESSORY 连接器附 CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 JT 16C 16#16 PIN RECP CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR SSR OCMOS FET 200MA NO 6-SOIC
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SPANSION LLC Spansion, Inc. Spansion Inc.
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V29C51000T-45P V29C51000T-45T V29C51000T-45J V29C5 |
512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 512k5536 × 85伏的CMOS闪存 512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 12k5536 × 8伏的CMOS闪存
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Mosel Vitelic, Corp.
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AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位)的CMOS存储 Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32 8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32 8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32 MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
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TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器(为512k字x18位同步无转向静态内存)
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Toshiba Corporation Toshiba, Corp.
|
M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
UPD444008LE-10 UPD444008LE-12 UPD444008LE-8 |
4M-bit(512K-word x 8-bit) Fast SRAM
|
NEC
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IS24C08-2 IS24C08-2G IS24C08-2GI IS24C08-2P IS24C0 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit2-WIRESERIALCMOSEEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
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ETC[ETC]
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