| PART |
Description |
Maker |
| MA2J728 MA728 |
Schottky Barrier Diodes (SBD)
Silicon Epitaxial Planar Type Schottky Barrier Diodes
From old datasheet system
|
Matsshita / Panasonic
Mitsubishi
|
| 1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes
5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MA3Z792E MA3Z792D MA3Z792DMA792WA MA792WA MA792WK |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Matsshita / Panasonic
|
| WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology
ETC
|
| CDBU0520-HF-12 CDBU0520-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBK0520L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| HSB226WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| RK16 SPB-G56S AK06 EK06 EK16 FMB-2206 FMB-2306 FMB |
Schottky Barrier Diode - 60V
Schottky Barrier Diodes 肖特基势垒二极管
|
SANKEN[Sanken electric]
Electronic Theatre Controls, Inc.
http://
|
| CDBZ61045-HF CDBZ61045-HF-15 |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=45V, I-O=10A
SMD Schottky Barrier Rectifiers
|
Comchip Technology
|
| BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG
Diodes Incorporated
|
