| PART |
Description |
Maker |
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS
|
SGS Thomson Microelectronics
|
| 2SC1324 |
MITSUBISHI RF POWER TRANSISTOR
NPN EPITAXIAL PLANAR TYPE(BROADBAND AMPLIFIERS FROM VHF TO UHF BAND)
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC2133 SC2133 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications)
From old datasheet system
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers)
From old datasheet system
MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
| 40244 |
UHF Amplifiers
|
Semicoa
|
| MAX2664 |
VHF/UHF Low-Noise Amplifiers
|
Maxim Integrated Products
|
| BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BF245A BF245C BF244A BF244B BF245 BF245B BF245A-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion
|
ONSEMI[ON Semiconductor]
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
