| PART |
Description |
Maker |
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| BSS138LT1 |
N-CHANNEL POWER MOSFET
Power MOSFET 200 mAmps, 50 Volts
|
WILLAS ELECTRONIC CORP
|
| MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| 2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
|
ONSEMI[ON Semiconductor]
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| MGSF1N02LT105 MGSF1N02LT3G MGSF1N02LT1 MGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| IRF840 IRF820 IRFE430-JQR-B IRF741 IRFE210-JQR-BE4 |
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
1.8 A, 200 V, 1.725 ohm, Si, POWER, MOSFET
1.2 A, 400 V, 4.15 ohm, N-CHANNEL, Si, POWER, MOSFET
3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SEMELAB LTD
|
| MMBF0201NLT106 MMBF0201NLT1G MMBF0201NLT1 |
Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
|
ONSEMI[ON Semiconductor]
|
|
